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Theoretical
Simulation of
Backscattering
Electron
Coefficient for
SixGe1-x/Si
Heterostructure
as a Function of
Primary Electron
Beam Energy and
Ge Concentration
A.M.D. Assa’d* and
H. Kawariq
Department of
Basic Sciences,
Faculty of Arts
and Sciences,
Al-Ahliyya Amman
University,
Amman 19328,
Jordan.
Email:
ajaber@ammanu.edu.jo
Doi :
https://doi.org/10.47011/13.2.5
Cited by :
Jordan J. Phys.,
13 (2) (2020)
137-147
PDF
Received
on:
29/09/2019;
Accepted
on:
16/2/2020
Abstract:
This
study
aims to
investigate
the
backscattering
electron
coefficient
for SixGe1-x/Si
heterostructure
sample
as a
function
of
primary
electron
beam
energy
(0.25-20
keV) and
Ge
concentration
in the
alloy.
The
results
obtained
have
several
characteristics
that are
as
follows:
the
first
one is
that the
intensity
of the
backscattered
signal
above
the
alloy is
mainly
related
to the
average
atomic
number
of the
SixGe1-x
alloy.
The
second
feature
is that
the
backscattering
electron
coefficient
line
scan
shows a
constant
value
above
each
layer at
low
primary
electron
energies
below 5
keV.
However,
at 5 keV
and
above, a
peak and
a dip
appeared
on the
line
scan
above
Si-Ge
alloy
and Si,
respectively,
close to
the
interfacing
line.
Furthermore,
the
shape
and
height
of peak
and dip
broadening
depend
on the
primary
electron
energy
and
incidence
position
with
respect
to the
interfacing
line.
The last
feature
is that
the
spatial
resolution
of the
backscattered
signal
at the
interfacing
line is
improving
by
decreasing
the
primary
electron
energy
(below 5
keV) and
the
shared
element
(Si)
concentration.
On the
other
hand, a
poor
compositional
contrast
has been
shown at
low
primary
electron
energy
below 5
keV. For
energies
above 5
keV, the
spatial
resolution
becomes
weak.
These
results
can be
explained
by the
behavior
of the
incident
electrons
inside
the
solid
(interaction
volume),
especially
at a
distance
close to
the
interfacing
line and
their
chance
to
backscatter
out of
the
sample.
In
general,
a good
compositional
contrast
with a
high
spatial
resolution
can be
achieved
at
primary
electron
energy
equal to
1 keV.
Keywords:
Monte
Carlo
model,
Backscattering
electron
coefficient,
Si-Ge/Si,
Elastic
scattering,
Spatial
resolution,
Compositional
contrast.
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