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Pressure and Temperature Effects on the Magnetic Properties of Donor Impurities in a GaAs/AlGaAs Quantum Heterostructure Subjected to a Magnetic Field

Samah F. Abu Zaid, Ayham Shaer, Eshtiaq Hjaz, Mahmoud Ali and Mohammad K. Elsaid

Department of Physics, Faculty of Science, An-Najah National University, Nablus,

West Bank, Palestine.

 

Corresponding Author: Mohammad K. Elsaid    Email: mkelsaid@najah.edu

Doi: https://doi.org/10.47011/14.3.5

Cited by : Jordan J. Phys., 14 (3) (2021) 231-238

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Received on: 09/06/2020;                                          Accepted on: 30/8/2020

Abstract: The exact diagonalization method has been used to solve the effective-mass Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum heterostructure, in the presence of a donor impurity and under the effect of an applied uniform magnetic field. The donor impurity is located at distance (d) along the growth direction which is perpendicular to the motion of the electron in a two-dimensional heterostructure layer. We have investigated the dependence of the magnetization (M) and magnetic susceptibility (χ) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic field strength (), confining frequency (), donor impurity position (d), pressure (P) and temperature (T).

Keywords: Exact diagonalization, Donor impurity, Magnetic field, Magnetization, Magnetic susceptibility, Pressure and temperature.

 

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