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Optical and Electrical Analyses of Thallium Sulphide Thin Films

Q. A. Adenijia, Kola Odunaikeb, D. A. Leshib, A. T. Talabib, A. T. Adelekeb, A. O. Abea, R. E. Momohc and F. B. Musahd

a Department of Physics, Federal University of Kashere, Gombe State. Nigeria.

b Department of Physics, Olabisi Onabanjo University, Ago-Iwoye, Nigeria.

c Department of Chemical Sciences, Federal University of Kashere, Gombe State. Nigeria.

d Department of Computer Science, Emmanuel Alayande College of Education, Oyo, Nigeria.

 

Corresponding Author: Q. A. Adeniji               Email: qadeniji@yahoo.com

Doi: https://doi.org/10.47011/14.3.7

Cited by : Jordan J. Phys., 14 (3) (2021) 249-253

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Received on: 25/06/2020;                                                    Accepted on: 15/9/2020

 Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80C for about 5 hours to deposit the films. Effects of annealing on the film samples at 300C and 350C were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced.

Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

 

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