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Simulation and
Analysis of
Field-dependent
Measurements for
Different a-Si:H
and nc-Si:H
Samples
R. I. Badrana,b,
Saja
Elnajjarb
and Ahmad
Umarc,d
a
Physics
Department, The
Hashemite
University, P.
O. Box 330127,
Zarqa 13133,
Jordan.
b
Faculty of Arts
and Sciences,
Amman Arab
University,
Amman 11953 P.
O. Box 2234,
Jordan.
c
Department of
Chemistry,
Faculty of
Science and
Arts, Najran
University, P.
O. Box 1988,
Najran-11001,
Kingdom of Saudi
Arabia.
d
Promising Centre
for Sensors and
Electronic
Devices (PCSED),
Najran
University, P.
O. Box 1988,
Najran-11001,
Kingdom of Saudi
Arabia.
Corresponding
Author:
R. I. Badran
Email:
rbadran@hu.edu.jo ;
r.badran@aau.edu.jo
Doi : https://doi.org/10.47011/16.4.2
Cited by :
Jordan J. Phys.,
16 (4) (2023)
395-402
PDF
Received
on:
12/11/2022;
Accepted
on:
10/01/2023
Abstract:
A
simulation
based on
the
method
of
weighted
residuals
is
conducted
to
reproduce
the
available
experimental
data of
field-dependent
steady-state
photocarrier
grating
(SSPG).
Different
samples
of
amorphous
hydrogenated
silicon
(a-
Si: H)
and
nanocrystalline
hydrogenated
silicon
(nc-
Si: H)
thin
films
prepared
by
plasma-enhanced
chemical
vapor
deposition
(PECVD)
technique
are
employed
in the
simulation.
The
reproduced
field-dependent
data are
optimized
using
c2
indicator.
Approximate
and
correct
values
of
important
photoelectronic
parameters
are
extracted
from the
analysis
of
results.
The
analysis
reveals
values
of
small-signal
response
lifetime
and
electron
and hole
mobilities
comparable
to the
values
obtained
from
other
methods’
applications.
The
difference
between
approximate
and
correct
values
lies
within
the
experimental
error of
5% with
one
exception
regarding
a poorly
conductive
sample.
Moreover,
the
extracted
values
of both
ambipolar
diffusion
length
and
charge
carrier
density
are
found
reasonable
and
justify
the
success
of the
application
of the
adopted
method
on the
chosen
samples.
Keywords:
Electronic
transport
phenomena
in thin
films;
Charge
carriers:
generation,
recombination,
lifetime,
trapping,
mean
free
paths;
Photoconduction
and
photovoltaic
effects.
References
[1] Ritter, D.,
Zeldov, E. and
Weiser, K.,
Appl. Phys. Lett.,
49 (13) (1986)
791.
[2] Ritter, D.,
Weiser, K. and
Zeldov, E., J.
Appl. Phys., 62
(11) (1987)
4563.
[3] Ritter, D.,
Weiser, K. and
Zeldov, E.,
Phys. Rev. B, 38
(12) (1988)
8296.
[4] Li, Y.-M.,
Phys. Rev., 42
(14) (1990)
9025.
[5] Badran,
R.I., Results
Phys., 17 (2020)
103079.
[6] Hattori, K.,
Okamoto, H. and
Hamakawa, Y.,
Phys. Rev. B, 45
(3) (1992) 1126.
[7] Balberg, I.,
Phys. Rev. B, 44
(4) (1991) 1628.
[8] Badran,
R.I., J. Mater.
Sci. Mater.
Electron., 18
(4) (2007) 405.
[9] Abel, C.D.,
Bauer, G.H.. and
Bloss, W.H.,
Philos. Mag. B
Phys. Condens.
Matter; Stat.
Mech. Electron.
Opt. Magn.
Prop., 72 (5)
(1995) 551.
[10] Brüggemann,
R., J. Phys.
Conf. Ser., 253
(1) (2010)
012081.
[11] Sauvain,
E. and Chen, J.H.,
J. Appl. Phys.,
75 (10) (1994)
5191.
[12] Badran,
R.I. and Al-Awwad,
N., J.
Optoelectron.
Adv. Mater., 8
(4) (2006) 1466;
Al Awaad, N.,
MSc Thesis, The
Hashemite
University,
(2005).
[13] Badran,
R.I., J.
Optoelectron.
Adv. Mater., 10
(1) (2008) 174.
[14] Badran,
R.I., Brüggemann,
R. and Carius,
R., J.
Optoelectron.
Adv. Mater., 11
(10) (2009)
1464.
[15] Yadav, D.
and Agarwal,
S.C., Solid
State Commun.,
150 (7–8) (2010)
321.
[16] Niehus, M.
and Schwarz, R.,
Phys. Status
Solidi Curr.
Top. Solid State
Phys., 3 (6)
(2006) 2103.
[17] Zweigart,
S., Menner, R.,
Klenk, R. and
Schock, H.W.,
Mater. Sci.
Forum, 173–174
(1995) 337.
[18] Cheng, I.C.
and Wagner, S.,
Appl. Phys. Lett.,
80 (3) (2002)
440.
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